document number: 94554 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 hyperfast rectifier, 8 a fred pt ? vs-8sth06fp vishay semiconductors features ? hyperfast recovery time, extremely low q rr ? 175 c maximum operating junction temperature ? high frequency pfc ccm operation ? low leakage current ? halogen-free according to iec 61249-2-21 definition ? designed and qualified for industrial level description vs-8sth06fp 600 v series are the state of the art tandem hyperfast recovery rectifiers: excellent switching performance and extremely lo w forward voltage drop trade off is overcome, boosting overall application performance. specially designed for ccm pf c application, these devices show incomparable performance in every current intensive hard switching application. optimized reverse recovery stored charge enables downsizing of boosting switch and cooling system, increased operating frequency make possible use of smaller reactive elements. cost effective pfc application is then possible with high efficiency over wide input voltage range and loading factor. plastic insulated package features easy mounting together with not insulated parts. product summary package 3l to-220fp i f(av) 8 a v r 600 v v f at i f 2.4 v t rr (typ.) see recovery table t j max. 175 c diode variation doubler 12 3 3l to-220 full-pa k absolute maximum ratings for both diodes parameter symbol test conditions max. units repetitive peak reverse voltage v rrm 600 v dc forward current i f 50 % duty cycle, rect. waveforms, t c = 93 c 8 a non-repetitive peak surge current i fsm t c = 25 c 100 operating junction and storage temperatures t j , t stg - 55 to 175 c electrical specifications for both diodes (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 8 a - 2.1 2.4 i f = 8 a, t j = 125 c - 1.7 2 i f = 8 a, t j = 150 c - 1.6 1.8 reverse leakage current i r v r = v r rated - < 1 10 a t j = 125 c, v r = v r rated - 7 80 t j = 150 c, v r = v r rated - 27 100 junction capacitance c t v r = 600 v - 12 - pf
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94554 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-aug-10 vs-8sth06fp vishay semiconductors hyperfast rectifier, 8 a fred pt ? dynamic recovery characteristics for both diodes (t j = 25 c unless otherwise specified) parameter symbol test conditi ons min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = - 50 a/s, v r = 30 v - - 25 ns t j = 25 c i f = 8 a di f /dt = - 200 a/s v r = 390 v -19- t j = 125 c - 35 - peak recovery current i rrm t j = 25 c - 2.8 - a t j = 125 c - 4.6 5.5 reverse recovery charge q rr t j = 25 c - 26 - nc t j = 125 c - 84 - thermal - mechanical specifications for both diodes parameter symbol te st conditions min. typ. max. units maximum junction and storage temperature range t j , t stg - 55 - 175 c thermal resistance, junction to case r thjc -4.14.8 c/w thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased -0.2- weight -2.0- g -0.07- oz. mounting torque 6.0 (5.0) - 12 (10) kgf cm (lbf in) marking device case styl e 3l to-220 full-pak 8sth06fp
document number: 94554 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 vs-8sth06fp hyperfast rectifier, 8 a fred pt ? vishay semiconductors fig. 1 - maximum forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics forward voltage drop - v fm (v) instantaneous forward current - i f (a) 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 1 10 100 tj = 25c tj = 125c tj = 175c tj = 150c reverse voltage - v r (v) reverse current - i r (a) 0 100 200 300 400 500 600 0.001 0.01 0.1 1 10 100 1000 25c 125c 150c 175c reverse voltage - v r (v) junction capacitance - c t (pf) 0 100 200 300 400 500 600 1 10 100 t 1 , rectangular pulse duration (seconds) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 1e+03 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.02 d = 0.05 d = 0.1 d = 0.5 d = 0.2 d = 0.01
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 94554 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 19-aug-10 vs-8sth06fp vishay semiconductors hyperfast rectifier, 8 a fred pt ? fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd +pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = 50 % rated v r average forward current - i f (av) (a) allowable case temperature (c) 0 2 4 6 8 10 12 14 0 50 100 150 200 dc 50% rated vr applied square wave (d = 50) see note (1) average power loss ( watts ) 024681012 0 5 10 15 20 25 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 rms limit dc trr ( ns ) di f /dt (a/s ) 0 0 0 1 0 0 1 10 100 if = 8a, 125c if = 8a, 25c vr = 390v qrr ( nc ) di f /dt (a/s ) 0 0 0 1 0 0 1 10 100 1000 if = 8a, 125c if = 8a, 25c vr = 390v
document number: 94554 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 19-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 vs-8sth06fp hyperfast rectifier, 8 a fred pt ? vishay semiconductors ordering information table links to related documents dimensions www.vishay.com/doc?95264 part marking information www.vishay.com/doc?95266 2 - current rating (8 = 8 a) 3 - s = doubler 4 - t = to-220 5 - h = hyperfast recovery 1 - vishay semiconductors product suffix - voltage rating (06 = 600 v) 6 - fp = to-220 full-pak 7 device code 5 1 3 2 4 6 7 vs- 8 s t h 06 fp
document number: 95264 for technical questions concer ning discrete products, cont act: diodes-tech@vishay.com www.vishay.com revision: 21-jul-08 for technical qu estions concerning module products , contact: ind-modules@vishay.com 1 to-220 (3 pin) full-pak tandem outline dimensions vishay high power products dimensions in millimeters 0.96 0.051 10.5 0.127 2.56 0.051 4.69 0.127 7.5 (2 pics) 2.7 0.127 0.7 15.9 0.127 9.6 8 0.127 13.6 0.127 3.3 0.127 r0.6 ( b oth sides) 5 + 0.076 - 0.051 0.5 + 0.127 - 0.051 + 0.96 0.051 6.4 0.051 ? 1.7 8 ? 1.50 11.16 0.051 3.2 0.051 2.54 ? 3.0 0.051 ? 3.40 0.051
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